Body of Knowledge (BOK): Gallium Nitride (GaN) Power Electronics for Space Applications

[摘要] Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This presentation summarizes a body of knowledge (BOK) document in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The presentation also discusses GaN's applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

[发布日期] 2019-06-16

[学科分类] 电子与电气工程

[关键词] COST REDUCTION;ENERGY GAPS (SOLID STATE);GALLIUM NITRIDES;MANAGEMENT SYSTEMS;RELIABILITY;SEMICONDUCTORS (MATERIALS);SWITCHING;TECHNOLOGY UTILIZATION;THERMAL CYCLING TESTS;THERMAL CONDUCTIVITY;VOLTAGE REGULATORS