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Fabricating Ultra-Thin Silicon Carbide Diaphragms
[摘要] A process for fabricating relatively thin SiC diaphragms may include fast Reactive Ion Etching (RIE) followed by Dopant Selective Reactive Ion Etching (DSRIE). The process may produce silicon carbide (SiC) diaphragms thinner than 10 microns. These thinner, more sensitive diaphragms may then be used to effectively resolve sub-psi pressures in jet engines, for example.
[发布日期] 2018-05-22 [发布机构] 
[效力级别]  [学科分类] 机械工程学
[关键词] PRESSURE SENSORS;DIAPHRAGMS (MECHANICS);DAMAGE;ENGINE PARTS;PRESSURE MEASUREMENT;THICKNESS;PATENTS;SILICON CARBIDES;THERMOACOUSTIC EFFECTS;PIEZOELECTRIC TRANSDUCERS [时效性] 
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