Room Temperature Radiation Testing of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology
[摘要] Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.
[发布日期] 2019-07-08 [发布机构]
[效力级别] [学科分类] 电子与电气工程
[关键词] INTEGRATED CIRCUITS;HIGH TEMPERATURE ENVIRONMENTS;JFET;PROTOTYPES;RADIATION TOLERANCE;ROOM TEMPERATURE;SEMICONDUCTORS (MATERIALS);SILICON CARBIDES;SINGLE EVENT EFFECTS (SEE);TOTAL IONIZING DOSE (TID) [时效性]
