Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range

[摘要] Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

[发布日期] 2019-05-30

[学科分类] 电子与电气工程

[关键词] CAPACITORS;CIRCUIT BOARDS;ELECTRIC POTENTIAL;FIELD EFFECT TRANSISTORS;METAL OXIDE SEMICONDUCTORS;OPERATING TEMPERATURE;SWITCHING;TEMPERATURE EFFECTS;TEST CHAMBERS;THERMAL CYCLING TESTS;TIME SIGNALS;VOID RATIO;VOLTAGE CONVERTERS (DC TO DC)