High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications
[摘要] No abstract prepared.
[发布日期] 2001-12-01 [发布机构] Sandia National Laboratories
[效力级别] [学科分类]
[关键词] Aluminium Nitrides;Gallium Nitrides;36 Materials Science;Electronic Equipment;42 Engineering [时效性]
