Fabrication of carbon nanoscrolls from patterned CVD-grown graphene

[摘要] A planar process to roll lithographically defined sheets of chemical-vapor-deposition-grown graphene into carbon nanoscrolls by solvent evaporation is attempted. Graphene is observed to roll up by 350 nm on average from unrestrained edges, forming partial nanoscrolls. Resistance is measured while regulating charge carrier concentration with Si0 2 back gate. A large hysteresis is observed between increasing and decreasing backgate voltage sweeps, with a factor of two or greater difference in resistance that persists after backgate voltage returns to 0 V. The hysteresis is more pronounced and consistent in devices with a higher proportion of nanoscroll to flat graphene.

[发布机构] Massachusetts Institute of Technology