Materials Physics for Thermoelectric and Related Energetic Applications

[摘要] Thermoelectrics study the direct inter-conversion between heat flow and electrical power, which has a wide range of applications including power generation and refrigeration. The performance of thermoelectricity generation and the refrigeration is characterized by a dimensionless number called the Figure-of-Merit (ZT), defined as ZT = [sigma]-S 2T / [kappa], where a is the electrical conductivity, K is the thermal conductivity, S is the Seebeck coefficient, and T is the absolute temperature. Before 1993, the upper-limit of ZT was barely 1. After the efforts of more than twenty years, the upper-limit of ZT has been pushed up to ~2. However, for the thermoelectric technology to be commercially attractive, the value of ZT and the cost of production have to be further improved. Most of the ZT enhancing strategies that have been proposed since 1993 involve the changing and the controlling of the dimension of materials systems, the scattering mechanism(s) of carriers, the shape of the electronic band structure and the density of states, and the magnitude of the band gap. As further research is carried out, it is found that these strategies do not always work to enhance ZT. Even for a working materials system, the improvement margin of increasing ZT can be small. The balancing between [sigma] and S 2 / [kappa] has significantly limited the improvement margin for our ZT enhancing goal. Therefore, we have two problems to explore: (1) how can we deal with the strong correlation between [sigma] and S2 / [kappa] , when trying to enhance ZT, and (2) how can we make the above mentioned strategies more convergent as we change the dimension of materials systems, the scattering mechanism(s) of carriers, the shape of electronic band structure, and the magnitude of the band gap? This thesis aims to explore the solutions to these two major problems at the research frontier of thermoelectric ZT enhancement. The first problem is discussed by providing a new framework of pseudo-ZTs, where the electronic contribution (zte) and the lattice contribution (ztL) to the overall ZT can be treated in a relatively separate manner. The second problem is discussed under this new framework of pseudo-ZTs, through four subsections: (i) scattering and system dimension; (ii) band structure; (iii) density of states; (iv) band gap. The one-to-one correspondence relation between the carrier scattering mechanism(s) and the maximum Seebeck coefficient is further studied. A new tool for scattering mechanism(s) inference and for the Seebeck coefficient enhancement is provided. For the band structure and the band gap part, advanced band engineering methods are provided to study nanostructured narrow-gap materials, the Dirac cone materials, and the anisotropic materials, which are historically found to be good thermoelectric materials. To further demonstrate the newly developed theories, this thesis has also illustrated the application of these models in some specific materials systems, including the graphene system, the transition metal dichalcogenides monolayer materials systems, the Bi1 -xSbx alloys system, the In1.xGaxN alloys system, and the (BiiySby) 2(S1_xTex)3 alloys system.

[发布机构] Massachusetts Institute of Technology