Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

[摘要] The IrSix contacts have been used in Accumulated Low Schottky Barrier MOSFET on SOL An IrSix layer is formed as a result of reaction between metal and semiconductor during annealing. The process of silicidation in the lr/Si/SiO2/Si structure has been studied by means of cross-sectional transmission electron microscopy (XTEM). The influence of annealing temperatures (300, 600, 900degreesC) on silicide formation was analysed. The formation of a thin IrSix layer was observed at a temperature as low as 300degreesC. In the Ir/Si/SiO2/Si structure annealed at 600 degreesC, the It atoms are shown to penetrate across the Si layer, causing disturbance of the Ir/Si interface. After annealing at 900 degreesC large IrSix islands were formed in Si. The expansion of the IrSix grains in the Si layer was observed. TEM results were correlated with XPS and electrical measurements. (C) 2004 Elsevier B.V. All rights reserved.

[发布日期] 2004-11-17

[效力级别]  Proceedings Paper

[关键词] transmission electron microscopy;photoelectron spectroscopy;semiconductors;surfaces and interfaces;thin films