Low-temperature formation of platinum silicides on polycrystalline silicon

[摘要] Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt3Si and Pt2Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt3Si into Pt2Si occurs as a result of the thermal treatment for 30 min in the temperature range from 125 degrees C to 300 degrees C. The Pt3Si and Pt2Si phases crystallize to PtSi due to annealing at the temperatures from 320 degrees C to 480 degrees C. for the same time period. (C) 2020 Elsevier B.V. All rights reserved.

[发布日期] 2020-11-30

[关键词] Thin Films;Solid state reactions;Semiconductors;X-ray photoelectron spectroscopy;X-ray diffraction;TEM