Global solutions of the time-dependent drift-diffusion semiconductor equations

[摘要] In this paper, we study the global behavior of the time-dependent drift-diffusion model for semiconductor devices. Under certain assumptions on the mobilities, we first prove the existence of the global weak solutions with uniform L(infinity) bounds. Then we show that the system, when considered as a dynamical system, possesses an absorbing set with respect to the L(infinity) topology. (C) 1995 Academic Press, Inc.

[发布日期] 1995-12-10