Helium desorption in 3He implanted tungsten at low energy

[摘要] The behavior of helium in He-3 implanted tungsten has been studied using Nuclear Reaction Analysis as a function of the post-implantation annealing temperature. Two different implantation conditions have been investigated: medium energy (60 keV), and low energy (0.3 keV), which exhibit drastically different helium release behavior. In the case of medium energy implantation, desorption starts from 1550 K and seems to be due to the dissociation of single helium-vacancy complexes (He-V-1). At 1873 K the released fraction reaches 75% that suggests the presence of a second type of helium trapping site. In the case of low energy implantation, desorption is observed from 400 K (slightly above room temperature) and indicates the presence of shallow helium traps the nature of which is discussed. The released fraction of helium saturates at similar to 60% at the temperature of 1473 K which could be due to helium trapping at single He-V-1 complexes. (C) 2010 Elsevier B.V. All rights reserved.

[发布日期] 2011-10-01

[效力级别]  Proceedings Paper