Thermal desorption of deuterium implanted into beryllium

[摘要] By means of TDS measurements it is shown that the desorption of deuterium from Be implanted with 5 keV D-ions to fluences, Phi, from 1 x 10(20) D/m(2) to 1 x 10(21) D/m(2) proceeds in one high-temperature stage B, while at Phi x 1.2 x 10(21) D/m(2) one more stage A appears. The desorption maximum A is narrow and consists of two peaks A(1) and A(2) at about 460 K and 490 K, respectively. Peak A(1) is attributed to the desorption of deuterium from the walls of opened channels formed under D-ion implantation. Peak A(2) is a consequence of the opening of a part of bubbles/closed channels to the outer surface. The position of maximum B, T-m(B), shifts noticeably and nonsteadily on the fluence in a range 850-1050 K. The origin of this maximum is the liberation of D-atoms bound at vacancy complexes discussed previously by Wampler. The dependence of T-m(B) on the fluence is governed by the interaction of freely migrating D-atoms with arrangements of fully closed or partly opened gas cavities which are created under temperature ramping, but differently in specimens implanted with D-ions to different fluences.

[发布日期] 1996-10-01

[效力级别]  Proceedings Paper