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Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons
[摘要] We report the results of magnetic, heat-capacity, electrical and magnetoresistance measurements on Ho4RhAl and Er4RhAl, characterized by 3 sites for rare-earths (R). The main conclusions are: (i) Antiferromagnetic ordering sets in at (T-N =) similar to 8.8 and similar to 4.0 K respectively. While Ho compound appears to enter into a complex spin-glass phase at T < T-N (at nearly 5 K), spin-glass component appears to set in essentially almost at T-N for the Er case. (ii) The loss of the spin-disorder contribution in the magnetically ordered state is not pronounced, mimicking that in Gd2PdSi3, a compound which now attracts interest in the area of topological Hall effect and magnetic skyrmions, indicating complex Fermi surface. (iii) There is a minimum in the temperature dependence of electrical resistivity in the case of only Ho above T-N, but significant negative magnetoresistance is observed over a wide temperature range in the paramagnetic state increasing with decreasing temperature for both the cases. This finding establishes that these compounds belong to a select group of intermetallics in which spin-disorder contribution apparently increases gradually as one approaches respective T-N with decreasing temperature. This could be an experimental signature for the effect due to classical spin-liquid above T-N. In view of these properties analogous to those of Gd2PdSi3, it is of interest to investigate these 4:1:1 compounds further to understand possible unconventional roles of itinerant electrons, not only in the magnetically ordered state but also in the paramagnetic state, predicted by some theories in recent years for which this Gd compound is considered to be a classic example. Besides, magnetoresistance and isothermal entropy change (magnetocaloric effect) track each other. Isothermal entropy change at the peak in its plot versus temperature is large in comparison with that of the Gd analogue, possible implication of which is pointed out.
[发布日期] 2021-11-15 [发布机构] 
[效力级别]  [学科分类] 
[关键词] Ho4RhAl;Er4RhAl;Spin glass;Itinerant frustration;Electrical transport;Magnetocaloric effect [时效性] 
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