F centre production in CsI and CsI-Tl crystals under Kr ion irradiation at 15 K

[摘要] We present results of simultaneous in situ luminescence and optical absorption studies in scintillator CsI and CsI-Tl crystals, exposed to very dense electronic excitations induced by Kr-86 ions (8.63 MeV/amu). Irradiation at 15 K leads to the formation of the prominent F absorption band. In addition, several other features of the broad absorption between exciton and F bands were ascribed to an anion vacancy, alpha centre (240 nm), self-trapped hole, V-k centre (410 nm) and interstitials, H centres (560 nm). We have found that low doping of thallium (similar to 10(17) cm(-3)) causes the F centre formation to proceed more rapidly than in pure crystal. On the other hand, we were not able to create any amount of F centres in heavily doped CsI-TI. We have shown that point defects created by heavy ions manifested themselves in luminescence ageing. (C) 2000 Elsevier Science B.V. All rights reserved.

[发布日期] 2000-05-01

[效力级别]  Proceedings Paper

[关键词] F centre;CsI;CsI-Tl;scintillator;luminescence;interstitial;radiation damage