ION-BEAM INDUCED DIFFUSION AND CRYSTALLIZATION IN HIGH-DOSE ER IMPLANTED SI

[摘要] High doses (1 x 10(16)-1 x 10(17)/cm2) of 145 and 175 keV Er+ ions were implanted into single-crystal Si using implantation temperatures (T(i)) between room temperature and 520-degrees-C. Implanted samples were subsequently annealed using thermal annealing at 800-degrees-C under vacuum as well as 1 MeV As+ ion-beam-assisted annealing (IBAA) at 300-degrees-C. During Er+ implantation, we find evidence for ion beam induced mobility for T(i) as low as 300-degrees-C. A measurable redistribution of the implanted Er also occurs during the IBAA for Er doses greater than 5 x 10(16)/cm2. During Er implantation at T(i) > 300-degrees-C a polycrystalline ErSi2 phase is formed. For T(i) > 400-degrees-C the coherent precipitation of ErSi2 phase occurs within the crystalline Si matrix. During subsequent thermal annealing of samples implanted at T(i) > 400-degrees-C the Er distribution narrows due to Ostwald ripening, and preferential alignment occurs to form a discontinuous buried layer of a single-crystalline Er silicide.

[发布日期] 1991-07-01

[效力级别]  Proceedings Paper