Cluster size effect on reactive sputtering by fluorine cluster impact using molecular dynamics simulation

[摘要] The mechanism of high-yield sputtering induced by reactive cluster impact was investigated using molecular dynamics (MD) simulations. Various sizes of fluorine clusters were radiated on clean silicon surface. At an incident energy of 1 eV/atom. F atom and F-2 molecule are only adsorbed on the surface and sputtering of Si atom does not occur. However, fluorine cluster. which consists of more than several tens molecules causes sputtering. In this case, most of Si atoms are sputtered as fluorinated material such as SiFx. This effect is due to the fact that cluster impact induces high-density particle and energy deposition, which enhances both formation of precursors and desorption of etching products. The deposition of atoms and energy becomes denser as the incident cluster size increases, so that larger clusters have shown higher sputtering yield. (C) 2001 Elsevier Science B.V. All rights reserved.

[发布日期] 2001-06-01

[效力级别]  Proceedings Paper

[关键词] molecular dynamics;fluorine;silicon;cluster