Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

[摘要] A focused 12-MeV carbon ion micro-beam was used to acquire multiple single ion transients at various locations of a single CMOS transistor. Complete current transients induced by single ions were measured at a 5 GPIz analog bandwidth, The current transients reveal clear and discernible contributions of drift and diffusive charge collection. Estimates are presented for the drift assisted, funneling charge collection depth. Radiation damage effects on drift and diffusive charge collection are reported. Transients measured for drain and off-drain ion strikes compare well to 3D DAVINCI calculations, (C) 1999 Published by Elsevier Science B.V. All rights reserved.

[发布日期] 1999-09-01

[效力级别]  Proceedings Paper