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Encapsulated nanocrystals and quantum dots formed by ion beam synthesis
[摘要] High-dose ion implantation has been used to synthesize a wide range of nanocrystals and quantum dots and to encapsulate them in host materials such as SiO2, alpha-Al2O3, and crystalline Si. When Si nanocrystals are encapsulated in SiO2, they exhibit dose dependent absorption and photoluminescence which provides insight into the luminescence mechanism, Compound semiconductor nanocrystals (both group III-V and group II-VI) can be formed in these matrices by sequential implantation of the individual constituents, and we discuss their synthesis and some of their physical and optical properties.
[发布日期] 1997-05-01 [发布机构] 
[效力级别]  Proceedings Paper [学科分类] 
[关键词]  [时效性] 
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