Geant4 physics processes for microdosimetry and secondary electron emission simulation: Extension of MicroElec to very low energies and 11 materials (C, Al, Si, Ti, Ni, Cu, Ge, Ag, W, Kapton and SiO2)

[摘要] Several improvements are added to the MicroElec extension of Geant4 in order to track very low energy electrons, protons and ions in different materials. The interaction processes for ions and protons are extended down to 1 keV/nucleon, and to a few eVs for electrons, corresponding to the electron affinity or work-function of the selected material. Surface interaction processes for electrons are added, along with electron-phonon interactions for SiO2. The models are validated for silicon and several new materials (C, Al, Ti, Ni, Cu, Ge, Ag, W, SiO (2) and Kapton), which significantly broadens the capabilities of MicroElec. Developed for microdosimetry simulation, the module can now also be used for secondary electron emission applications.

[发布日期] 2021-01-15

[效力级别]  Proceedings Paper

[关键词] Geant4;Secondary electron emission;Monte Carlo;Microdosimetry;Electron;Proton;Heavy ion