Kinetics of dimer F2 type center annealing in MgF2 crystals

[摘要] In this paper, we analyzed experimental annealing kinetics of the primary electronic F centers and dimer F-2 centers observed in MgF2 at higher radiation doses and temperatures. The developed phenomenological theory takes into account the interstitial ion diffusion and recombination with the F-2-centers, as well as mutual sequential transformation with temperature growth of three types of experimentally observed dimer centers: F-2(1), F-2(2), F-2(3) (which differ tentatively by charges (0, +1, +2) with respect to the host crystalline sites). The results of the electron, neutron and ion irradiation are compared. As the result, the relative initial concentrations of three types of F-2 electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies.

[发布日期] 2018-11-15

[效力级别]  Proceedings Paper

[关键词] MgF2;Radiation defects;F centers;F-2 centers;Diffusion;Annealing kinetics