Study of interaction of C+ ion beam with a Si pitch grating on a macro-scale level

[摘要] A Si pitch grating has been exposed to a 6 key C+ ion beam at normal angle of incidence and at an angle of 42 degrees parallel to the structure. Sputtering of the grating has been observed experimentally by Rutherford backscattering, the areal density of implanted C ions into the Si structure has been measured by nuclear reaction analysis. The bombardment has been simulated by the SDTrimSP-2D code at normal angle of incidence, as well as at angles of 42 degrees parallel and perpendicular to the structure. The numerical simulations show reasonable agreement with experimental results. Significant differences in Si sputtering and implantation of C ions parallel and perpendicular to the structure indicate an anisotropy effect, which could not be observed in the 1D case. (C) 2012 Elsevier B.V. All rights reserved.

[发布日期] 2012-12-15

[关键词] SDTrimSP-2D;Sputtering;Reflection;Roughness;Ion-surface interactions