Enhanced surface hardness in nitrogen-implanted silicon carbide

[摘要] Preliminary studies have been performed on the feasibility of carbon-silicon nitride formation (beta-Si1.5C1.5N4, the homologue of equilibrium beta-Si3N4 or hypothetical beta-C3N4) by high dose N+-implantation into polycrystalline beta-SiC (cubic). Thin films were formed using 100 keV implantations with varying ion doses in the range from 1.1x10(17) to 27.1x10(17) N/cm(2), and target temperatures between -196 degrees C and 980 degrees C. X-ray diffraction with a position-sensitive detector and cross-sectional transmission electron microscopy revealed that the as-implanted surfaces (up to 860 degrees C) contained similar to 0.1 mu m thick buried amorphous layers. Rutherford backscattering spectroscopy showed that the peak concentration of nitrogen saturated up to approximately 54 at.% with increasing doses, suggesting formation of a new phase. Implantation to doses of 1.1 x 10(17) and 2.3 x 10(17) N/cm(2) at 980 degrees C caused enhanced surface hardness compared to SiC.

[发布日期] 1996-09-01

[效力级别]  Proceedings Paper