Diffusion-time-resolved ion-beam-induced charge collection from stripe-like test junctions induced by heavy-ion microbeams

[摘要] To design more radiation-tolerant integrated circuits (ICs), it is necessary to design and test accurate models of ionizing-radiation-induced charge collection dynamics. A new technique, diffusion-time-resolved ion-beam-induced charge collection (DTRIBICC), is used to measure the average arrival time of the diffused charge, which is related to the average time of the arrival carrier density at the junction. Specially designed stripe-like test junctions are studied using a 12 MeV carbon microbeam with a spot size of similar to1 mum. The relative arrival time of ion-generated charge and the collected charge are measured using a multiple parameter data acquisition system. A 2-D device simulation code, MEDICI, is used to calculate the charge collection dynamics on the stripe-like test junctions. The simulations compare well with experimental microbeam measurements. The results show the importance of the diffused charge collection by junctions, which is especially significant for single-event upsets (SEUs) and multiple-event upsets (MEUs) in electronic devices. The charge sharing results also indicate that stripe-like junctions may be used as position-sensitive detectors with a resolution of similar to0.1 mum. (C) 2001 Elsevier Science B.V. All rights reserved.

[发布日期] 2001-07-01

[效力级别]  Proceedings Paper

[关键词] heavy-ion microprobe;single-event upset;diffusive charge collection;average arrival time;diffusion-time-resolved ion-beam-induced charge collection