Electrical characterization of electron irradiated and annealed lowly - doped 4H-SiC

[摘要] The effect of high energy electron (HEE) irradiation on nickel Schottky contacts fabricated on lowly doped n-type 4H-SiC was investigated by deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. The Schottky contacts were deposited by resistive evaporation of nickel and were observed to be of good rectification quality from current-voltage measurements. DLTS was performed up to 350K to investigate the presence of defects before and after HEE irradiation. HEE irradiation was observed to induce three deep level defects below 350 K at 0.42 eV, 0.62 eV and 0.76 eV below the conduction band minimum. These deep level defects are labelled E-0.42, E-0.67 and E-0.76. Defects E-0.42 and E-0.76 were observed after the same electron fluence and were annealed out at the same temperature, suggesting that the defects could be strongly related. The effect of HEE irradiation and annealing on as-grown defects was also investigated and is reported. (C) 2017 Elsevier B.V. All rights reserved.

[发布日期] 2017-10-15

[效力级别]  Proceedings Paper

[关键词] 4H-SiC;Schottky contacts;High energy electron irradiation;DLTS