Investigating the formation of isotopically pure layers for quantum computers using ion implantation and layer exchange

[摘要] Quantum computers have been proposed that exploit entangled quantum states between atoms that are isolated from environmental perturbations in a semiconductor vacuum which can be formed by cryogenically cooling an isotopically pure, defect free crystalline layer consisting of Si, or Ge. In a preliminary investigation of an implant and deposition layer exchange technique to produce such vacuums, a layer of aluminium was implanted with Si-28 using a conventional implanter. After annealing and cross sectioning, layer exchange was observed to have produced multiple isolated crystals in a cross sectional TEM image. Further deposited Al layers were implanted with Ge using a SIMPLE (Single Ion Multispecies Positioning at Low Energy) implanter over a range of fluences. After anneals at 250 degrees C and Al removal, crystals of Ge (which also contained Si) were seen at areal densities that increased with implant fluence.

[发布日期] 2019-12-15

[关键词] Ion-implantation;Isotopically pure layers;Layer exchange;Quantum computing