PEEM imaging of dopant contrast in Si(001)

[摘要] We report on a quantitative investigation of doping-induced contrast in photoelectron emission microscopy images of Si devices. The calibration samples were fabricated using standard photolithography and focused ion beam writing, and consisted of p-type (B) stripes of different nominal dopant concentrations (10(18)-10(20) cm(-3)) and line separations, written on n-type (N-d = 10(14) cm(-3)) Si(001) substrates. Using a near-threshold light source, we find that the signal intensity increases monotonically with B concentration over the measured range of doping. The measured intensity ratios are in good agreement with a calculation based on photoemission from the valence band. (C) 2000 Elsevier Science B.V. All rights reserved.

[发布日期] 2000-08-01

[关键词] electron microscopy;photoelectron emission;photoemission (total yield);semi-empirical models and model calculations;silicon;surface electronic phenomena (work function;surface potential, surface states, etc.)