Kinetic stabilization of Fe film on GaAs(100):: An in situ X-ray reflectivity study

[摘要] We study the growth of Fe films on GaAs(100) at a low temperature, 140 K, by in situ X-ray reflectivity (XRR) using synchrotron radiation. The XRR curves are well modeled by a single Fe layer on GaAs both at the growth temperature and after annealed at the room temperature. We found that the surface became progressively rougher during the growth with the growth exponent, beta(s) = 0.43 +/- 0.14. The observed beta(s) is attributed to the restricted interlayer diffusion at the low growth temperature. The change of the interface width during growth was minimal. When the Fe film was annealed to room temperature, the surface smoothed, keeping the interface width almost unchanged. The confinement of the interface derives from that the diffusion of Ga and As proceeds via the inefficient bulk diffusion, and the overlying Fe film is kinetically stabilized. (c) 2007 Elsevier B.V. All rights reserved.

[发布日期] 2007-12-01

[关键词] Fe;GaAs;thin film;growth;interface;X-ray reflectivity