CVD diamond nucleation and growth on scratched and virgin Si(100) surfaces investigated by in-situ electron spectroscopy

[摘要] The nucleation and growth of CVD diamond has been investigated on scratched and virgin Si(100) by photoemission spectroscopy. In both cases, a silicon carbide layer of a depth of 1-2 nm forms rapidly. The formation of this layer is apparently independent of subsequent diamond nucleation, which occurs after a long induction time on the virgin sample. The results are rationalized using Avrami's law of the kinetics of surface coverage by diamond islands.

[发布日期] 1997-04-20

[效力级别]  Proceedings Paper

[关键词] chemical vapor deposition;diamond;growth;nucleation;silicon oxides;x-ray photoelectron spectroscopy