Low energy electron microscopy of indium on Si(001) surfaces

[摘要] Low energy electron microscopy is used to study the behavior of thin indium films on Si(0 0 1) surfaces from 100 degreesC up to 700 degreesC. For temperatures below 150 degreesC we see inversions in the LEEM dark-field image and LEED 1/2-order spot intensities as indium coverage increases from 0 to 2 ML. For temperatures between 150 and 600 degreesC we find the formation of a disordered and an ordered (4 x 3) indium phase on the surface. For temperatures above 500 degreesC we observe significant rearrangement of the Si(0 0 1) surface due to the presence of indium and etching of the Si(0 0 1) surface by indium at temperatures greater than 650 degreesC. (C) 2003 Elsevier B.V. All rights reserved.

[发布日期] 2003-12-10

[关键词] indium;silicon;low-energy electron microscopy (LEEM);etching