BEHAVIOR OF TELLURIUM ON SILICON(100)

[摘要] The adsorption of tellurium on Si(100) was investigated using scanning tunneling microscopy (STM) and LEED. Tellurium was evaporated onto the clean silicon (100)2 X 1 surface at approximate to 25 degrees C. Coverages ranging from 0.1 to 3.0 ML were investigated. Atom-resolved images reveal that low coverages of Te deposited at room temperature adsorb on top of the silicon 2 X 1 dimer rows with a minimum spacing of 2a where a = 3.84 Angstrom is the width of a 1 X 1 surface unit cell. There is a slight preference for growth along the silicon dimer rows. This surface saturates at 0.25 ML. When the low coverage sample is subsequently annealed for 10 min at 300 degrees C, trenches perpendicular to the silicon dimer rows appear with tellurium decorating the trench edge. At greater than or equal to 1 ML Te coverage, the surface consists of rows of Te with a spacing of a with missing rows of atoms at a maximum interval of 5-6 rows.

[发布日期] 1994-12-20