Formation of anomalously wide Si(111)√3 x √3 clean surface and its stability

[摘要] High-temperature scanning tunneling microscope observation has been performed to investigate formation of a Si(111)root3 x root3 structure and its stability on a quenched surface. Formation of anomalously wide Si(111)root3 x root3 domains was observed by increasing adatom density of Si on quenched surface below the transition temperature between disordered 1 x 1 and ordered simple adatom structures. By adding Si adatoms most of the simple adatom structure transformed into the root3 x root3 structure. Domain boundaries between adjacent root3 x root3 domains are straight and along the (110) direction, The root3 x v root3 structure transforms into the 2 x n structure by annealing and Si cluster increases in number to maintain Si adatom density on the surface. This indicates that the 2 x n structure is energetically more stable than the root3 x root3 structure. (C) 2001 Elsevier Science BN. All rights reserved.

[发布日期] 2001-11-01

[效力级别]  Proceedings Paper

[关键词] scanning tunneling microscopy;surface relaxation and reconstruction;surface thermodynamics (including phase;transitions);silicon