In situ characterization of SiO2 etching with second harmonic generation and ellipsometry

[摘要] The etching process of SiO2 films on Si(111) was studied by in situ second harmonic generation (SHG), linear reflectivity and ellipsometry. All measurements are very well described with one simple model, with only the etching speed as adjustable parameter. In contrast to the linear optical measurements SHG shows high interface sensitivity when the silicon is etched clean.

[发布日期] 1996-05-15

[效力级别]  Proceedings Paper

[关键词] crystalline-amorphous interfaces;ellipsometry;etching;second harmonic generation;silicon oxides