Temperature suppression of STM-induced desorption of hydrogen on Si(100) surfaces

[摘要] The temperature dependence of hydrogen (H) desorption from Si(100) H-terminated surfaces by a scanning tunneling microscope (STM) is reported for negative sample bias. It is found that the STM induced H desorption rate (R) decreases several orders of magnitude when the substrate temperature is increased from 300 to 610 K. This is most noticeable at a bias voltage of -7 V where R decreases by a factor of 200 for a temperature change of 80 K, whilst it only decreases by a factor of 3 of at -5 V upon the same temperature chan ge. The experimental data can be explained by desorption due to vibrational heating by inelastic scattering via a hole resonance. This theory predicts a weak suppression of desorption with increasing temperature due to a decreasing vibrational lifetime, and a strong bias dependent suppression due to a temperature dependent lifetime of the hole resonance. (C) 1999 Elsevier Science B.V. All rights reserved.

[发布日期] 1999-04-01

[关键词] ab initio quantum chemical methods and calculations;electron stimulated desorption;hydrogen;low index single crystal surfaces;scanning tunneling microscopy;silicon;vibrations of adsorbed molecules