CHARACTERIZATION OF SUBMONOLAYER GROWTH OF CU ISLANDS ON CU(001)

[摘要] Submonolayer island growth of Cu on Cu(001) is simulated using energy barriers derived by the atom-embedding method of Finnis and Sinclair. We find that the island density during deposition quickly saturates and forms a plateau over a range of the coverage theta. We observe that due to high edge mobility the islands form compact shapes and that the average island size RBAR scales like RBAR approximately theta(n) where n almost-equal-to 0.5, in agreement with recent experiments.

[发布日期] 1994-04-10