Infrared induced visible emission from porous silicon: The mechanism of anodic oxidation

[摘要] The visible luminescence caused by anodic oxidation of p-type porous silicon has been studied. It is shown that similar luminescence can be observed in n-type material by illumination with near-infrared light. Addition of a suitable reducing agent to the electrolyte solution can both suppress the oxidation of the porous layer and quench its luminescence. These results confirm a previously suggested mechanism, in which the capture of a valence band hole in a surface bond of the porous semiconductor gives rise to a surface state intermediate capable of thermally injecting an electron into the conduction band.

[发布日期] 1997-01-10

[关键词] electrochemical methods;electroluminescence;models of surface chemical reactions;oxidation;porous silicon;semiconductor-electrolyte interfaces