Probing the silicon-silicon oxide interface of Si(111)-SiO2-Cr MOS structures by DC-electric-field-induced second harmonic generation

[摘要] The buried Si(111)-SiO2 interface has been studied in transmission through planar Si-SiO2-Cr MOS structures using DC-electric-field-induced second-harmonic generation (EISHG). The rotational anisotropy and oxide thickness dependence of EISHG have been measured. Multiple reflections in the oxide layer and interference effects between field-dependent and field-independent contributions to the nonlinear polarization are shown to affect the shape of the EISHG bias dependence. From a simple model the relative size of field-dependent and field-independent contributions can be estimated. In this way, information about the interface charge distribution can be obtained.

[发布日期] 1996-05-15

[效力级别]  Proceedings Paper

[关键词] interfaces;metal-oxide-semiconductor (MOS) structures;second harmonic generation