Pulsed laser deposited KNbO3 thin films for applications in high frequency range

[摘要] Potassium niobate thin films were grown by pulsed laser deposition on various substrates. Influence of deposition conditions on film characteristics was studied. Structural investigation evidenced that single phase polycrystalline randomly oriented films were grown on sintered alumina whereas epitaxial films were grown on (100)SrTiO3 and (100)MgO substrates. The microstructure was highly controlled by the structural characteristics. Interdigited capacitors built from KNbO3 films on two different substrates (alumina and MgO) showed the strong influence of the structural characteristics on the dielectric behavior. The variation of the equivalent capacitance measured on the interdigital capacitor on MgO was 6.4% at 2.5 GHz while it was 1.5% on alumina, in both cases for a moderate applied field of similar to 15 kV cm(-1). The results show the potentiality of these ferroelectric materials for use in frequency agile microwave electronics. (c) 2006 Elsevier B.V All rights reserved.

[发布日期] 2006-12-05

[关键词] ferroelectric properties;structural properties;pulse laser deposition;potassium niobate