Photoacoustic spectroscopy to determine the optical properties of thin film 4H-SiC

[摘要] The optical transitions in a range of 1.5-5.2 eV of n-type 4H-SiC have been investigated experimentally by photoacoustic spectroscopy and theoretically by a full-potential linearized augmented plane wave method. From the absorption spectrum, we found the indirect optical bandgap at 3.2 eV and the direct transitions around 4.5 eV in very good agreement with what has been predicted by theoretical calculations. (c) 2006 Elsevier B.V. All rights reserved.

[发布日期] 2006-12-05

[关键词] silicon carbide;photoacoustic spectroscopy