Electrical properties of Ir-silicide formation on p-Si(100) in ultra-high vacuum

[摘要] An epitaxial Ir-silicide him was grown on top of a p-Si(100) substrate a temperature of 450 degreesC in an ultra-high vacuum. The epitaxial Ir-silicide film was identified to be Ir3Si4 with four types of epitaxial modes. The average Schottky barrier height of the epitaxial Ir3Si4/p-Si(100) diode at 60-100 K was determined to be 0.177 eV with an ideality factor of 1.12. In contrast, a polycrystalline IrSi/p-Si(100) diode was formed by conventional room-temperature deposition and annealing at high temperatures, and its average Schottky barrier height was 0.157 eV with an ideality factor of 1.08. The difference in Schottky barrier height was attributed to the merged effect of phase composition and microstructure difference between Ir3Si4 and IrSi silicides. The epitaxial Ir3Si4/p-Si(100) diode has higher n values than polycrystalline IrSi/p-Si(100) due to more interfacial states of oxygen remaining at the Ir3Si4/p-Si(100) interface. (C) 2000 Elsevier Science S.A. All rights reserved.

[发布日期] 2000-09-03

[效力级别]  Proceedings Paper

[关键词] epitaxial;iridium;silicide;ideality factor;Schottky barrier