Thermal dependence of low-frequency noise in polysilicon thin film transistors

[摘要] Thermal dependence of low frequency noise in low temperature (<= 600 degrees C) polysilicon thin film transistors is studied in devices biased from weak to moderate inversion and operating in the linear mode. Drain current noise spectral density, measured in the temperature range from 260 K to 310 K, is thermally activated following the Meyer Neldel rule. Analysis of the thermal activation of noise, supported by the theory of trapping/detrapping processes of carriers into oxide traps located close to the interface, leads to the calculation of the deep state interface distribution in function of the Meyer Neldel characteristic energy. (C) 2009 Elsevier B.V. All rights reserved.

[发布日期] 2009-10-01

[效力级别]  Proceedings Paper

[关键词] 1/f noise;Polysilicon TFTs;Thermal activation;Meyer Neldel rule;Interface state distribution