Interfacial reactions of Ti- and Zr(Si1-xGex) Si contacts with rapid thermal annealing

[摘要] The interfacial reactions of Ti/ and Zr/Si0.5Ge0.5/Si systems by rapid thermal annealing (RTA) have been investigated at temperatures from 580 to 900 degreesC. In Ti/Si0.5Ge0.5 systems, C49-TiSi2 is transformed to C54-Ti(Si1-yGey)(2) by RTA for 30 s at approximately 750 degreesC, whose transformation temperature is lower than that of TiSi2 in Ti/Si systems. The C54-Ti(Si1-yGey)(2) has Si-rich chemical compositions and, on the other hand, the piling up of Ge atoms near the interface between germanosilicide and SiGe layers is observed. In the case of Zr/Si0.5Ge0.5 systems, Zr5Ge4 and C49-Zr(Si1-yGey)(2) is produced at 580 degreesC and 700 degreesC, respectively. The reaction between Zr and Si0.5Ge0.5 occurs uniformly and the Ge fraction of C49-Zr(Si1-yGey)(2) is close to y = 0.5. It is considered that Ge atoms have an influence on the reduction of the formation temperature of C54 and C49 phases in Ti/ and Zr/Si1-xGex systems, respectively. (C) 2000 Elsevier Science S.A. All rights reserved.

[发布日期] 2000-09-03

[效力级别]  Proceedings Paper

[关键词] germanium;silicides;titanium;zirconium