HIGH-RESOLUTION RUTHERFORD BACKSCATTERING SPECTROSCOPY STUDIES ON MO/SI MULTILAYERS

[摘要] High resolution Rutherford backscattering spectroscopy with an electrostatic analysis of the ion energy is applied to Mo/Si multilayers with a period of 7 nm. The multilayers have been produced for X-ray optical purposes by electron beam evaporation in ultrahigh vacuum at three different temperatures during deposition: 30, 150 and 200-degrees-C. In the Rutherford backscattering spectra the layer structure is resolved in all three cases. The multilayers deposited at 150 and 200-degrees-C show interlayers of mixed Mo and Si of different thicknesses on the two sides of a Mo layer. The most distinct layer structure is found for the 150-degrees-C sample, whereas the spectra for the 30-degrees-C sample indicate a larger interfacial roughness and those for the 200-degrees-C sample larger interfacial layers of mixed Mo and Si than for the 150-degrees-C sample. On baking the multilayers to temperatures higher than 400-degrees-C, interdiffusion of Mo and Si is observed. The multilayers deposited at 150 and 200-degrees-C are destroyed after baking to 600-degrees-C, whereas the multilayer deposited at 30-degrees-C has already been destroyed after baking to 500-degrees-C. Up to a baking temperature of 600-degrees-C neither losses of material from the stack nor accumulation of Mo or Si at the surface or the interface between the stack and substrate are observed.

[发布日期] 1993-05-15

[效力级别]  Proceedings Paper