Nucleation and evolution of Si1-xGex islands on Si(001)

[摘要] In this study we report a systematic investigation of the metastable morphologies of Si1-xGex layers obtained by the interplay of kinetics and thermodynamics during growth on Si(001). We show that three main growth regimes can be distinguished as a function of the misfit and of the deposited thickness. They correspond to three equilibrium steady state morphologies that consist of(105)-facetted hut islands, huts and domes in co-existence, and a bimodal size distribution of domes, respectively. The shape transitions between these states are attributed to different levels of relaxation. (C) 2000 Elsevier Science B.V. All rights reserved.

[发布日期] 2000-12-22

[效力级别]  Proceedings Paper

[关键词] self-organisation;Si;Ge;islands;molecular beam epitaxy;2D-3D growth transition;stress relaxation