Characterizing and modeling the apparent anomalous behavior of resistivity in Cr-Si-O thin films

[摘要] The Cr-Si-O material system is of interest for use in thin film resistors. The films are sputter deposited onto conducting substrates from metal-oxide compacts using various reactive gas mixtures. The cermet film compositions range from 50 to 100 vol.% SiO2 as determined from elemental measurements of the Cr, Si and O content. In a wide range of resistivities from 10 to 10(14) Ohm-cm measured through the film thickness, an apparent anomalous behavior is found as a function of the Cr, Si and O composition. The anomaly can be attributed to a discontinuous variation of resistivity with film composition near 80 vol.% SiO2. The film microstructure is characterized as a distribution of conducting metal-silicide particles within an insulating matrix. The 'effective medium' theory is used to predict the variation of conductivity and successfully models the anomalous resistivity behavior. (C) 1998 Elsevier Science S.A. All rights reserved.

[发布日期] 1998-11-02

[效力级别]  Proceedings Paper

[关键词] Cr-Si-O cermet;resistivity;effective medium theory;reactive sputtering