LOW-TEMPERATURE PLASMA-ASSISTED OXIDATION AND THIN-FILM DEPOSITION PROCESSES FOR FORMING DEVICE-QUALITY SIO2/SI AND COMPOSITE DIELECTRIC-SIO2/SI HETEROSTRUCTURES

[摘要] In the high-temperature thermal oxidation of Si, the SiO2/Si interface is continuously regenerated as the bulk oxide grows. This paper describes an alternative low temperature, 200-300-degrees-C, plasma-assisted process that optimizes electrical properties of SiO2/Si interfaces and bulk SiO2 layers by separately controlling interface formation and bulk oxide deposition. Composite dielectrics, oxide/nitride (ON) and oxide/nitride/oxide (ONO), have been fabricated by extending the low temperature plasma-assisted processes to include deposition of Si3N4 films. The electrical properties of SiO2/Si structures formed by the two-step, low temperature oxidation-deposition process are essentially the same as those of SiO2/Si structures formed by high temperature, 850-1050-degrees-C, thermal oxidation. The electrical properties of devices incorporating ON and ONO composite dielectrics are degraded with respect to the SiO2/Si structures, but are similar to those of composite dielectrics formed by combinations of high temperature processing.

[发布日期] 1992-11-20

[效力级别]  Proceedings Paper