Sputter deposition of high resistivity boron carbide

[摘要] We have succeeded in the rf magnetron sputter deposition of high resistivity boron carbide (B1-xCx). This has been accomplished by the sputter depositing the boron carbide from a methane saturated boron carbide target. We show that the composition and optical band gap of the sputter deposited material are functions of the applied rf power. Furthermore, boron carbide/silicon heterojunction diodes fabricated via sputtering compare favorably with those fabricated from borane cage molecule sources using plasma enhanced chemical vapor deposition (PECVD). (C) 1998 Elsevier Science S.A, All rights reserved.

[发布日期] 1998-12-14

[关键词] boron carbide;deposition process;sputtering