已收录 268921 条政策
 政策提纲
  • 暂无提纲
Electron evaporation of carbon using a high density plasma
[摘要] High-density plasmas are often used either in the preparation of thin films or for the modification of surfaces. However, except for collision-driven chemical reactions the electrons present are not used, although electron bombardment hearing of the work piece nearly always occurs. Principally it is the ions and neutrals that are utilised for material processing. By suitable biasing of a conducting source material the electrons can be extracted from a high-density low-pressure plasma to such an extent that evaporation of this source material can be achieved. Due to the presence of the plasma and the flux of electrons a large proportion of the evaporant is expected to be ionised. We have used this novel arrangement to prepare thin films of carbon using a resonant high-density argon plasma and a water-cooled rod of high purity graphite. Multiple substrates were used both outside of, and immersed in, the plasma. We report the characteristics of the plasma (electron temperature and density, the ion energy and flux, and optical emission spectra), the deposition process (the evaporation rate and ion/neutral ratio), and the film properties (IR and UV/Vis absorption spectra, Raman spectra, elemental analysis, hardness and refractive index). (C) 2000 Elsevier Science S.A. All rights reserved.
[发布日期] 2000-09-03 [发布机构] 
[效力级别]  Proceedings Paper [学科分类] 
[关键词] carbon;evaporation;plasma processing and deposition [时效性] 
   浏览次数:2      统一登录查看全文      激活码登录查看全文