Photoluminescence studies of lateral composition modulated short-period AlAs/InAs superlattices

[摘要] We present low temperature photoluminescence data for a series of layers exhibiting spontaneous lateral composition modulation in (AlAs)(m) (InAs)(n) short period superlattices grown on InP with differing average lattice constants, i.e. varying global strain, The low temperature photoluminescence peak energies were found to be much lower than the corresponding energy expected for the equivalent InxAl1-xAs alloys. The bandgap energy reductions are found to approach 500 meV and this reduction is found to correlated with the 'strength' of the composition modulation wave amplitude. (C) 1999 Elsevier Science S.A. All rights reserved.

[发布日期] 1999-12-01

[效力级别]  Proceedings Paper

[关键词] photoluminescence studies;AlAs/InAs superlattices;spontaneous lateral composition modulation