GROWTH OF ZNO THIN-FILMS ON GAAS BY PULSED-LASER DEPOSITION

[摘要] ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full width at half maximum value of the (002) X-ray diffraction line of less than 0.13 degrees have been grown on such buffer layers at a substrate temperature of only 350 degrees C.

[发布日期] 1995-04-01

[关键词] LASER ABLATION;ZINC OXIDE;X-RAY DIFFRACTION;DEPOSITION PROCESS;STRUCTURAL PROPERTIES