Room temperature ferromagnetic (Zn,Co)O epitaxial films obtained by low-temperature MOCVD process

[摘要] High quality epitaxial films of Zn1-xCoxO solid solutions were obtained by low-temperature MOCVD process using water vapor up to x=0.33. Depositions were carried out at 300 degrees C on r-sapphire substrates. Films structure and composition were investigated by XRD, XPS and EDX measurements. Magnetic properties were examined using SQUID and Kerr effect measurements. All samples showed ferromagnetic behavior at room temperature. NEXAFS and PES were employed to investigate electronic structure of the films. (c) 2007 Elsevier B.V. All rights reserved.

[发布日期] 2007-10-15

[效力级别]  Proceedings Paper

[关键词] magnetic semiconductors;Co-doped ZnO;thin films;low-temperature MOCVD